IRF530

SIP MOS N-Channel 100V 14A

• VDS = 100V, ID = 15A
• RDS(ON) < 90mΩ @ VGS=10V
• RDS(ON) < 115mΩ @ VGS=4.5V
• High-density cell design for lower Rdson
• Fully characterized avalanche voltage and current
• Good stability and uniformity with high EAS
• Excellent package for efficient heat dissipation
• 100% UIS TESTED!
• 100% DVDS TESTED!

Absolute Maximum Ratings:

• Drain-Source Voltage (VDS): 100V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 15A
• Pulsed Drain Current (IDM): 40A
• Maximum Power Dissipation (Tc=25℃): 31W
• Single Pulse Avalanche Energy (EAS): 21mJ
• Operating Junction and Storage Temperature Range: -55 To 175℃
• Thermal Resistance, Junction-to-Case (RθJC): 4.8 ℃/W