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IRF610

IRF610
SIP MOS N-Channel 200V 3,3A 1,5R TO220

SKU: IRF610

BRAND: Communica


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Collections: Semiconductors

Type: Transistors

Category: N Channel Mosfet Transistor

SIP MOS N 200V 3,3A 1,5R TO220

  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 36 W
  • Maximum Drain-Source Voltage |Vds|: 200 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 3.3 A
  • Maximum Junction Temperature (Tj): 150 °C
  • Total Gate Charge (Qg): 8.2(max) nC
  • Rise Time (tr): 17 nS
  • Drain-Source Capacitance (Cd): 53 pF
  • Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
CatGroup Field Effect Transistor

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