SKU: IPA65R650CEXKSA1
BRAND: Communica
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FET Type
|
N-Channel |
Technology
|
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss)
|
650 V
|
Current - Continuous Drain (Id) @ 25°C
|
7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
650mOhm @ 2.1A, 10V
|
Vgs(th) (Max) @ Id
|
3.5V @ 210µA
|
Gate Charge (Qg) (Max) @ Vgs
|
23 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
440 pF @ 100 V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
28W (Tc)
|
Operating Temperature
|
-40°C ~ 150°C (TJ)
|
Mounting Type
|
Through Hole
|
Device | Transistor |