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- 2SA1943Type: TransistorsP 230V 230V 15A 150W 25MHZ TO3PL Overview Features Specification
R 29.50Out Of Stock - 2SC5200Type: TransistorsN 230V 230V 15A 150W 25MHZ TO3PL Overview Features Specification
R 29.50Out Of Stock - BSY27Type: TransistorsTransistor N 20V 15V 100MA 40MN TO18 Specifications Material of Transistor : Si Polarity : NPN Maximum Collector Power Dissipation : 0.3 W Maximum Collector-Base Voltage : 20 V Maximum ...
R 1.85In Stock - BSY45Type: TransistorsTransistor N 20V 15V 100MA 40MN TO18 Downloads Datasheet - BSY45 Additional Information CatGroup Transistor Device Transistor
R 1.35Out Of Stock - GT30F125Type: TransistorsIGBT 330V 200A 25W TO220SIS Overview Features Specification Power Dissipation 200A
R 24.50Out Of Stock - IRF9Z34NType: TransistorsSIP MOS N-CH 55V 19A TO220 RDS= 0,10R Overview Features Advanced Process Technology dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Specification ...
R 13.50Out Of Stock - IRFB3077Type: TransistorsN-MOSFET 75V 210A 2.8MR 370W TO220AB Overview Features Specification Polarity N-Channel Power Dissipation 210A Downloads Datasheet Download
R 57.95Out Of Stock - IRFZ44Type: TransistorsN-FET 60V 46A 250W 0E028 Overview Features Specification Polarity N-Channel Material Silicon Power Dissipation 250A
R 11.25In Stock - STGW80H65DFBType: TransistorsIGBT 650V 120A 469W TO247 Features Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC= 80 A ...
R 180.00In Stock - STW12NK90ZType: TransistorsMOS N-CH 11A 900V 880mΩ TO-247 MOS N-CH 11A 900V Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Very good manufacturing ...
R 150.00In Stock
